Silicon Carbide Ceramic Tray‘s abstract

Silicon Carbide Ceramic Tray‘s showcase/detail feature

Silicon Carbide Ceramic Tray‘s properties

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

1. Meticulously engineered design to withstand the demanding conditions of the SiC wafer growth and processing environment.
2. Renowned for its exceptional heat and corrosion resistance, facilitating the creation of an optimal environment conducive to epitaxial growth.
3. The meticulously applied SiC crystal coating ensures a flawlessly smooth surface and unmatched durability against chemical cleaning.
4. Meticulously crafted material to prevent cracks and delamination.

Parameters of RTP RTA SiC Coated Carrier

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

• The graphite substrate and silicon carbide layer exhibit excellent density, providing effective protection in high-temperature and corrosive environments.
• The silicon carbide-coated susceptor utilized for single crystal growth boasts exceptional surface flatness.
• Minimization of the thermal expansion coefficient disparity between the graphite substrate and silicon carbide layer significantly enhances bonding strength, mitigating the risk of cracking and delamination.
• Both the graphite substrate and silicon carbide layer possess high thermal conductivity, ensuring superior heat distribution.
• Characterized by a high melting point, outstanding resistance to high-temperature oxidation, and corrosion resistance.

Silicon Carbide Ceramic Tray‘s applications

1. Carrier for SiC wafer growth and processing: The tray serves as a platform for the production of high-quality SiC wafers, facilitating epitaxial growth and ensuring uniform crystal quality.
2. Substrate for semiconductor device fabrication: Used in the manufacturing process of semiconductor devices such as solar cells and LED components, the tray enhances device performance and stability by providing a stable and reliable platform for deposition processes.
3. Platform for chemical reaction devices in harsh environments: The tray functions as a robust carrier for chemical reactors operating in high-temperature and corrosive environments, enabling the processing of various chemical materials with efficiency and reliability.
4. Heating tray in oxidation furnaces: Employed as a heating tray in oxidation furnaces, the tray facilitates high-temperature treatment of materials such as ceramics and metals, ensuring uniform heating and optimal process outcomes.
5. Industrial applications requiring high-temperature and corrosion resistance: The tray finds utility in various industrial applications, including heat treatment and sintering processes, where its exceptional heat and corrosion resistance properties are indispensable for reliable performance and longevity.

The advantages of using Silicon Carbide Ceramic Tray

The advantages of using Silicon Carbide Ceramic Tray in semiconductor applications include:

1. High Temperature Resistance: Silicon carbide ceramic exhibits excellent heat resistance, allowing the tray to withstand high temperatures encountered during semiconductor processing without deformation or degradation.
2. Corrosion Resistance: The tray’s silicon carbide composition provides exceptional resistance to corrosion, ensuring longevity and reliability in harsh chemical environments commonly encountered in semiconductor fabrication.
3. Dimensional Stability: Silicon carbide ceramic maintains its dimensional stability even under extreme temperature fluctuations, ensuring precise positioning and alignment of semiconductor components during processing.
4. Uniform Heating: The high thermal conductivity of silicon carbide ceramic ensures uniform heating across the tray’s surface, promoting consistent semiconductor processing and minimizing the risk of hotspots or uneven temperature distribution.
5. Smooth Surface Finish: The fine surface finish of silicon carbide ceramic trays minimizes the risk of surface defects or contamination during semiconductor processing, contributing to higher yield and improved product quality.
6. Compatibility with High Vacuum Environments: Silicon carbide ceramic trays are compatible with high vacuum environments commonly used in semiconductor processing, ensuring reliable performance without outgassing or contamination issues.

Overall, the use of Silicon Carbide Ceramic Tray in semiconductor applications offers superior performance, durability, and reliability, contributing to the efficient and precise fabrication of semiconductor devices.

Q&A for Silicon Carbide Ceramic Tray

Is silicon carbide SiC an important ceramic material?

Silicon carbide (SiC) is an important ceramic material that is made by allowing sand (silicon dioxide, S i O 2 ) to react with powdered carbon at high temperature. Carbon monoxide is also formed.

What is the main method for manufacturing of silicon carbide SiC ceramics?

While alternative production methods have emerged for selected high purity silicon carbide over the last years, the majority of SiC used today is produced using the so called Acheson process.