Silicon Carbide Wafer’s descriptions Silicon carbide (SiC), also known as carborundum, represents a versatile semiconductor compound comprised of silicon and carbon with the chemical formula Silicon Carbide Wafer. Renowned for its robustness and resilience, SiC finds widespread utilization in semiconductor electronic devices engineered to operate under extreme conditions characterized by high temperatures, high voltages, or […]

4H-N 4H-Semi SiC substrate’s abstract 4H-N and 4H-Semi SiC substrates are key materials in the field of semiconductor technology, offering unique properties and promising applications. Silicon carbide (SiC) is a wide-bandgap semiconductor material known for its excellent electrical, thermal, and mechanical properties. The 4H crystal structure of SiC provides specific electronic properties suitable for various […]

Silicon Carbide wafer Substrate’s abstract Silicon Carbide (SiC) wafer substrates, renowned for their remarkable physical and chemical properties, have emerged as a revolutionary material in semiconductor technology. This abstract provides a comprehensive overview of the key attributes from both the physical and chemical perspectives, highlighting their implications in diverse applications. Physical Properties: Silicon Carbide boasts […]

4H N-TYPE SIC SUBSTRATE‘s Product Overview The 4H N-Type Silicon Carbide (SiC) Substrate stands at the forefront of semiconductor technology, embodying a range of superior attributes that propel electronic applications into new frontiers. This product overview explores the fundamental characteristics, diverse applications, and inherent advantages that define the 4H N-Type SiC Substrate, elucidating its pivotal […]

4H Semi-insulating SiC substarte/wafer ‘s abstract The 4H Semi-insulating Silicon Carbide (SiC) substrate/wafer stands as a cornerstone in the realm of advanced electronic device manufacturing. This product summary delves into its physical characteristics, elucidating the intricate details that define its performance and utility in various applications. Crystal Structure: The 4H Semi-insulating SiC substrate boasts a […]

SiC Substrate‘s abstract Silicon Carbide (SiC) substrates represent a pivotal class of materials in the realm of electronic and semiconductor industries. Renowned for their exceptional physical and electrical properties, SiC substrates have found diverse applications across various technological domains. This abstract delves into the different types of SiC substrates, their unique characteristics, and their wide-ranging […]

SiC wafer‘s Abstract SiC wafer offers a diverse range of Silicon Carbide (SiC) wafers, encompassing five key types: 4H-N, 4H-SEMI, 6H-N, 6H-SEMI, and HPSI. The 4H-N and 6H-N wafers belong to the hexagonal crystal structure, while the 4H-SEMI and 6H-SEMI are specifically tailored for semiconductor applications. HPSI (High Purity Semi Insulating) wafers are designed to […]